? 2006 ixys corporation all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c85v v dgr t j = 25 c to 175 c; r gs = 1 m 85 v v gsm transient 20 v i d25 t c = 25 c70a i dm t c = 25 c, pulse width limited by t jm 190 a i ar t c = 25 c25a e as t c = 25 c 500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 10 p d t c = 25 c 176 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3 g to-263 2.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a85v v gs(th) v ds = v gs , i d = 50 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 100 na i dss v ds = v dss 1 a v gs = 0 v t j = 150 c 100 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 10.5 13.5 m trenchmv tm power mosfet preliminary technical information n-channel enhancement mode avalanche rated IXTA70N085T ixtp70n085t v dss =85 v i d25 =70 a r ds(on) 13.5 m ds99639 (11/06) to-263 (ixta) to-220 (ixtp) g s g d s g = gate d = drain s = source tab = drain (tab) (tab) features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. IXTA70N085T ixtp70n085t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 1 30 52 s c iss 2570 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 370 pf c rss 85 pf t d(on) resistive switching times 22 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 72 ns t d(off) r g = 10 (external) 40 ns t f 40 ns q g(on) 59 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 15 nc q gd 14.5 nc r thjc 0.85 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 70 a i sm pulse width limited by t jm 190 a v sd i f = 25 a, v gs = 0 v, note 1 1.1 v t rr i f = 25 a, -di/dt = 100 a/ s90ns v r = 40 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved IXTA70N085T ixtp70n085t fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 5v 9v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 35a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 70a i d = 35a fig. 5. r ds(on) normalized to i d = 35a value vs. drain current 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA70N085T ixtp70n085t fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 v gs - volts i d - amperes t j = -40oc 25oc 150oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 55 60 q g - nanocoulombs v gs - volts v ds = 42v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved IXTA70N085T ixtp70n085t ixys ref: t_70n085t (2v) 7-10-06.xls fig. 14. resistive turn-on rise time vs. drain current 20 25 30 35 40 45 50 55 60 65 70 75 80 85 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t r - nanoseconds r g = 10 v gs = 10v v ds = 42v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t r - nanoseconds 19 21 23 25 27 29 31 33 35 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 42v i d = 30a i d = 10a fig. 16. resistive turn-off switching times vs. junction temperature 38 39 40 41 42 43 44 45 46 47 48 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 38 41 44 47 50 53 56 59 62 65 68 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 10 , v gs = 10v v ds = 42v i d = 10a i d = 30a fig. 17. resistive turn-off switching times vs. drain current 38 39 40 41 42 43 44 45 46 47 48 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t f - nanoseconds 34 38 42 46 50 54 58 62 66 70 74 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 10 , v gs = 10v v ds = 42v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 25 30 35 40 45 50 55 60 65 70 75 80 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 v gs = 10v v ds =42v i d = 10a i d = 30a fig. 18. resistive turn-off switching times vs. gate resistance 40 50 60 70 80 90 100 110 120 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t f - nanoseconds 30 50 70 90 110 130 150 170 190 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 42v i d = 30a i d = 10a
|
